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IPB044N15N5
IPB044N15N5
MOSFETs IPB044N15N5
Infineon
IPB044N15N5
--
Diodes, Transistors and Thyristors
MOSFETs
IPB044N15N5.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count7
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Source
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyOptiMOS™5
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5
Typical Rise Time (ns)6
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)80
Typical Gate Charge @ Vgs (nC)80@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)24
Typical Gate to Drain Charge (nC)16
Maximum Gate Threshold Voltage (V)4.6
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)174
Typical Input Capacitance @ Vds (pF)6000@75V
Maximum Drain Source Resistance (MOhm)4.4@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 150V 174A 7-Pin(6+Tab) D2PAK T/R
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