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IPB160N04S2L03ATMA2
IPB160N04S2L03ATMA2
MOSFETs IPB160N04S2L03ATMA2
Infineon
IPB160N04S2L03ATMA2
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveYes
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Source
SVHC Exceeds ThresholdYes
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000000
Maximum Drain Source Voltage (V)40
Maximum Gate Threshold Voltage (V)2
Maximum Continuous Drain Current (A)160
Maximum Drain Source Resistance (MOhm)2.7@10V
Maximum Pulsed Drain Current @ TC=25°C (A)640
Description
OptiMOS - T Power-Transistor
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