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MOSFETs IPB180P04P403ATMA2
Infineon
IPB180P04P403ATMA2
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 7 |
| Automotive | Yes |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quint Source |
| Package Width | 9.25 |
| Package Height | 4.4 |
| Package Length | 10 |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Standard Package Name | TO-263 |
| SVHC Exceeds Threshold | Yes |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 150000 |
| Typical Gate Charge @ 10V (nC) | 190 |
| Typical Gate Charge @ Vgs (nC) | 190@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 4070 |
| Maximum Drain Source Voltage (V) | 40 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 180 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 13570@25V |
| Maximum Drain Source Resistance (MOhm) | 2.8@10V |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 720 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62 |
| Description |
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