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IPB26CN10N G
IPB26CN10N G
MOSFETs IPB26CN10N G
Infineon
IPB26CN10N G
--
Diodes, Transistors and Thyristors
MOSFETs
IPB26CN10N G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.45(Max)
Package Height4.57(Max)
Package Length10.31(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyOptiMOS
Standard Package NameTO-263
Typical Fall Time (ns)3
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Power Dissipation (mW)71000
Typical Gate Charge @ 10V (nC)23
Typical Gate Charge @ Vgs (nC)23@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)13
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)35
Typical Input Capacitance @ Vds (pF)1560@50V
Maximum Drain Source Resistance (MOhm)26@10V
Description
Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) D2PAK
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