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SI4966DY
SI4966DY
MOSFETs SI4966DY
Vishay
SI4966DY
--
Diodes, Transistors and Thyristors
MOSFETs
SI4966DY.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)40
Typical Rise Time (ns)40
Number of Elements per Chip2
Maximum Power Dissipation (mW)1000
Typical Gate Charge @ Vgs (nC)25@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)500
Typical Turn-On Delay Time (ns)40
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)90
Typical Gate to Drain Charge (nC)4
Maximum Gate Threshold Voltage (V)1.5
Typical Gate to Source Charge (nC)6.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.5@N Channel|3.5@P Channel
Maximum Drain Source Resistance (mOhm)25@4.5V
Description
Trans MOSFET N-CH 20V 4.5A/3.5A 8-Pin SOIC N
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