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IPB60R600C6ATMA1
IPB60R600C6ATMA1
MOSFETs IPB60R600C6ATMA1
Infineon
IPB60R600C6ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.45(Max)
Package Height4.57(Max)
Package Length10.31(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyCoolMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)13
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Power Dissipation (mW)63000
Typical Gate Charge @ 10V (nC)20.5
Typical Gate Charge @ Vgs (nC)20.5@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)80
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.3
Typical Input Capacitance @ Vds (pF)440@100V
Maximum Drain Source Resistance (mOhm)600@10V
Description
Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) D2PAK T/R
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