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MOSFETs IPB80P03P405ATMA2
Infineon
IPB80P03P405ATMA2
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
EU RoHSCompliant with Exemption
Part StatusActive
Channel TypeP
Maximum Power Dissipation (mW)1370000
Maximum Drain Source Voltage (V)30
Maximum Gate Threshold Voltage (V)4
Maximum Continuous Drain Current (A)80
Maximum Pulsed Drain Current @ TC=25°C (A)320
Description
Optimos P2 Power Transistor
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