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NTZD3155CT1G
NTZD3155CT1G
MOSFETs NTZD3155CT1G
onsemi
NTZD3155CT1G
--
Diodes, Transistors and Thyristors
MOSFETs
NTZD3155CT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeFlat
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width1.2
Package Height0.55
Package Length1.6
Product CategorySmall Signal
Supplier PackageSOT-563
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)8@N Channel|19@P Channel
Typical Rise Time (ns)4@N Channel|12@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)250
Typical Gate Charge @ Vgs (nC)1.5@4.5V@N Channel|1.7@4.5V@P Channel
Maximum Gate Source Voltage (V)±6
Typical Turn-On Delay Time (ns)6@N Channel|10@P Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)16@N Channel|35@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.54@N Channel|0.43@P Channel
Typical Input Capacitance @ Vds (pF)80@16V@N Channel|105@16V@P Channel
Maximum Drain Source Resistance (MOhm)550@4.5V@N Channel|900@4.5V@P Channel
Description
Trans MOSFET N/P-CH 20V 0.54A/0.43A 6-Pin SOT-563 T/R
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