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MOSFETs IPC100N04S5L1R1ATMA1
Infineon
IPC100N04S5L1R1ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| PCB changed | 8 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.48 |
| Package Height | 1 |
| Package Length | 5.15 |
| Product Category | Power MOSFET |
| Supplier Package | TDSON EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS 5 |
| Standard Package Name | SON |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 22 |
| Typical Rise Time (ns) | 6 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 150000 |
| Typical Gate Charge @ 10V (nC) | 105 |
| Typical Gate Charge @ Vgs (nC) | 105@10V |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Output Capacitance (pF) | 1440 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 47 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Minimum Gate Threshold Voltage (V) | 1.2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 100 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 6200@25V |
| Maximum Drain Source Resistance (MOhm) | 1.1@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 16 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 400 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Description |
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