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MOSFETs IPC300N20N3X7SA1
Infineon
IPC300N20N3X7SA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.40
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingFrame
AutomotiveNo
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyOptiMOS
Number of Elements per Chip1
Maximum Drain Source Voltage (V)200
Maximum Gate Threshold Voltage (V)4
Maximum Drain Source Resistance (MOhm)100@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 200V Frame
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