Product Attribute | Attribute Value |
HTS | 8541.29.00.40 |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Wafer |
Automotive | No |
Part Status | Unconfirmed |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1 |
Process Technology | OptiMOS |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 250 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Drain Source Resistance (MOhm) | 100@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |