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MOSFETs IPC302N25N3AX1SA1
Infineon
IPC302N25N3AX1SA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.40
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
AutomotiveNo
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyOptiMOS
Number of Elements per Chip1
Maximum Drain Source Voltage (V)250
Maximum Gate Threshold Voltage (V)4
Maximum Drain Source Resistance (MOhm)100@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 250V Wafer
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