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IRF250
IRF250
MOSFETs IRF250
Infineon
IRF250
--
Diodes, Transistors and Thyristors
MOSFETs
IRF250.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width25.53(Max)
Package Height7.74(Max)
Package Length39.37(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3
Process TechnologyHEXFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)130(Max)
Typical Rise Time (ns)190(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)115(Max)
Typical Gate Charge @ Vgs (nC)115(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)35(Max)
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)170(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Typical Input Capacitance @ Vds (pF)3500@25V
Maximum Drain Source Resistance (mOhm)90@10V
Description
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3
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