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IPD200N15N3GATMA1
IPD200N15N3GATMA1
MOSFETs IPD200N15N3GATMA1
Infineon
IPD200N15N3GATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveUnknown
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyOptiMOS 3
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)6
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)23
Typical Gate Charge @ Vgs (nC)23@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)23
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)50
Typical Input Capacitance @ Vds (pF)1820@75V
Maximum Drain Source Resistance (MOhm)20@10V
Maximum Pulsed Drain Current @ TC=25°C (A)200
Description
Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) DPAK T/R
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