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IPD50P03P4L11ATMA2
IPD50P03P4L11ATMA2
MOSFETs IPD50P03P4L11ATMA2
Infineon
IPD50P03P4L11ATMA2
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveYes
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
SVHC Exceeds ThresholdYes
Number of Elements per Chip1
Maximum Power Dissipation (mW)580000
Maximum Drain Source Voltage (V)30
Maximum Gate Threshold Voltage (V)2
Maximum Continuous Drain Current (A)50
Maximum Drain Source Resistance (MOhm)10.5@10V
Maximum Pulsed Drain Current @ TC=25°C (A)200
Description
Power MOSFET Transistor
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