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IPD60R600CP
IPD60R600CP
MOSFETs IPD60R600CP
Infineon
IPD60R600CP
--
Diodes, Transistors and Thyristors
MOSFETs
IPD60R600CP.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyCoolMOS
Standard Package NameTO-252
Typical Fall Time (ns)17
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)60000
Typical Gate Charge @ 10V (nC)21
Typical Gate Charge @ Vgs (nC)21@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)75
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.1
Typical Input Capacitance @ Vds (pF)550@100V
Maximum Drain Source Resistance (MOhm)600@10V
Description
Trans MOSFET N-CH 600V 6.1A 3-Pin(2+Tab) DPAK T/R
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