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IPD70R1K4P7S
IPD70R1K4P7S
MOSFETs IPD70R1K4P7S
Infineon
IPD70R1K4P7S
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Diodes, Transistors and Thyristors
MOSFETs
IPD70R1K4P7S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Height2.4(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageTO-252
Maximum IDSS (uA)1
Process TechnologyCoolMOS P7
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)61
Typical Rise Time (ns)4.9
Number of Elements per Chip1
Maximum Power Dissipation (mW)22700
Typical Gate Charge @ 10V (nC)4.7
Typical Gate Charge @ Vgs (nC)4.7@10V
Maximum Gate Source Voltage (V)16
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)700
Typical Turn-Off Delay Time (ns)63
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)4
Typical Input Capacitance @ Vds (pF)158@400V
Maximum Drain Source Resistance (mOhm)1400@10V
Maximum Gate Source Leakage Current (nA)1000
Maximum Pulsed Drain Current @ TC=25°C (A)8.2
Description
Trans MOSFET N-CH 700V 4A 3-Pin(2+Tab) TO-252 T/R
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