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FQB55N10TM
FQB55N10TM
MOSFETs FQB55N10TM
onsemi
FQB55N10TM
--
Diodes, Transistors and Thyristors
MOSFETs
FQB55N10TM.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)140
Typical Rise Time (ns)250
Number of Elements per Chip1
Maximum Power Dissipation (mW)3750
Typical Gate Charge @ 10V (nC)75
Typical Gate Charge @ Vgs (nC)75@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)110
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)55
Typical Input Capacitance @ Vds (pF)2100@25V
Maximum Drain Source Resistance (MOhm)26@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) D2PAK T/R
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