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IPD70R360P7S
IPD70R360P7S
MOSFETs IPD70R360P7S
Infineon
IPD70R360P7S
--
Diodes, Transistors and Thyristors
MOSFETs
IPD70R360P7S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyCoolMOS P7
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)18
Typical Rise Time (ns)8
Number of Elements per Chip1
Maximum Power Dissipation (mW)59500
Typical Gate Charge @ 10V (nC)16.4
Typical Gate Charge @ Vgs (nC)16.4@10V
Maximum Gate Source Voltage (V)16
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)700
Typical Turn-Off Delay Time (ns)100
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)12.5
Typical Input Capacitance @ Vds (pF)517@400V
Maximum Drain Source Resistance (MOhm)360@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH 700V 12.5A 3-Pin(2+Tab) DPAK T/R
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