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IPD80P03P4L07ATMA2
IPD80P03P4L07ATMA2
MOSFETs IPD80P03P4L07ATMA2
Infineon
IPD80P03P4L07ATMA2
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyOptiMOS P2
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)60
Typical Rise Time (ns)4
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)88000
Typical Gate Charge @ 10V (nC)63
Typical Gate Charge @ Vgs (nC)63@10V
Maximum Gate Source Voltage (V)5
Typical Output Capacitance (pF)1220
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3.7
Typical Turn-Off Delay Time (ns)15
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)8
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.5
Typical Gate to Source Charge (nC)16
Typical Reverse Recovery Time (ns)50
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)80
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)4400@25V
Typical Reverse Recovery Charge (nC)40
Maximum Drain Source Resistance (MOhm)6.8@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)5
Maximum Pulsed Drain Current @ TC=25°C (A)320
Typical Reverse Transfer Capacitance @ Vds (pF)30@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)62
Description
Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R
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