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IPI023NE7N3GAKSA1
IPI023NE7N3GAKSA1
MOSFETs IPI023NE7N3GAKSA1
Infineon
IPI023NE7N3GAKSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width10
Package Height4.4
Package Length9.25
Product CategoryPower MOSFET
Supplier PackageTO-262
Process TechnologyOptiMOS
Standard Package NameI2PAK
Typical Fall Time (ns)22
Typical Rise Time (ns)26
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)155
Typical Gate Charge @ Vgs (nC)155@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)70
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)120
Typical Input Capacitance @ Vds (pF)10800@37.5V
Maximum Drain Source Resistance (MOhm)2.3@10V
Description
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-262 Tube
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