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IPL60R180P6
IPL60R180P6
MOSFETs IPL60R180P6
Infineon
IPL60R180P6
--
Diodes, Transistors and Thyristors
MOSFETs
IPL60R180P6.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed4
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width8
Package Height1
Package Length8
Product CategoryPower MOSFET
Supplier PackageVSON EP
Maximum IDSS (uA)1
Process TechnologyCoolMOS P6
Standard Package NameSON
Typical Fall Time (ns)5.8
Typical Rise Time (ns)7.6
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)176000
Typical Gate Charge @ 10V (nC)44
Typical Gate Charge @ Vgs (nC)44@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)12.5
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)40
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)22.4
Typical Input Capacitance @ Vds (pF)2080@100V
Maximum Drain Source Resistance (mOhm)180@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 22.4A 4-Pin VSON EP T/R
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