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NTH4LN019N65S3H
NTH4LN019N65S3H
MOSFETs NTH4LN019N65S3H
onsemi
NTH4LN019N65S3H
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Source
Package Width5
Package Height22.54
Package Length15.6
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)5
Process TechnologySuperFET III
Typical Fall Time (ns)4.1
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)625000
Typical Gate Charge @ 10V (nC)282
Typical Gate Charge @ Vgs (nC)282@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)51
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)190
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)75
Typical Input Capacitance @ Vds (pF)15993@400V
Maximum Drain Source Resistance (mOhm)19.3@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 650V 75A 4-Pin(4+Tab) TO-247 Tube
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