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MOSFETs IPL65R190E6
Infineon
IPL65R190E6
--
Diodes, Transistors and Thyristors
MOSFETs
IPL65R190E6.pdf
Specification
Product AttributeAttribute Value
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
SVHC Exceeds ThresholdYes
Number of Elements per Chip1
Maximum Power Dissipation (mW)1510000
Maximum Drain Source Voltage (V)650
Maximum Gate Threshold Voltage (V)3.5
Maximum Continuous Drain Current (A)20.2
Maximum Drain Source Resistance (MOhm)190@10V
Maximum Pulsed Drain Current @ TC=25°C (A)66
Description
Metal Oxide Semiconductor Field Effect Transistor
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