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IPL65R230C7
IPL65R230C7
MOSFETs IPL65R230C7
Infineon
IPL65R230C7
--
Diodes, Transistors and Thyristors
MOSFETs
IPL65R230C7.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeNo Lead
PCB changed4
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width8
Package Height1
Package Length8
Product CategoryPower MOSFET
Supplier PackageVSON EP
Maximum IDSS (uA)1
Process TechnologyCoolMOS C7
Standard Package NameSON
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)22
Typical Rise Time (ns)5
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)67000
Typical Gate Charge @ 10V (nC)20
Typical Gate Charge @ Vgs (nC)20@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)71
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)10
Typical Input Capacitance @ Vds (pF)996@400V
Maximum Drain Source Resistance (MOhm)230@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 650V 10A 4-Pin VSON EP T/R
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