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IPN70R360P7S
IPN70R360P7S
MOSFETs IPN70R360P7S
Infineon
IPN70R360P7S
--
Diodes, Transistors and Thyristors
MOSFETs
IPN70R360P7S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)18
Typical Rise Time (ns)8
Number of Elements per Chip1
Maximum Power Dissipation (mW)7200
Typical Gate Charge @ 10V (nC)16.4
Typical Gate Charge @ Vgs (nC)16.4@10V
Maximum Gate Source Voltage (V)16
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)700
Typical Turn-Off Delay Time (ns)100
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)12.5
Typical Input Capacitance @ Vds (pF)517@400V
Maximum Drain Source Resistance (mOhm)360@10V
Description
Trans MOSFET N-CH 700V 12.5A T/R
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