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IPP029N06N
IPP029N06N
MOSFETs IPP029N06N
Infineon
IPP029N06N
--
Diodes, Transistors and Thyristors
MOSFETs
IPP029N06N.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.57(Max)
Package Height9.45(Max)
Package Length10.36(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)1
Process TechnologyOptiMOS
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)8
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ 10V (nC)65
Typical Gate Charge @ Vgs (nC)56@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)30
Maximum Gate Threshold Voltage (V)3.3
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)4100@30V
Maximum Drain Source Resistance (MOhm)2.9@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-220 Tube
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