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IPP041N04N G
IPP041N04N G
MOSFETs IPP041N04N G
Infineon
IPP041N04N G
--
Diodes, Transistors and Thyristors
MOSFETs
IPP041N04N G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.57(Max)
Package Height9.45(Max)
Package Length10.36(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Process TechnologyOptiMOS
Standard Package NameTO-220
Typical Fall Time (ns)4.8
Typical Rise Time (ns)3.8
Number of Elements per Chip1
Maximum Power Dissipation (mW)94000
Typical Gate Charge @ 10V (nC)42
Typical Gate Charge @ Vgs (nC)42@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)23
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)80
Typical Input Capacitance @ Vds (pF)3400@20V
Maximum Drain Source Resistance (mOhm)4.1@10V
Description
Trans MOSFET N-CH 40V 80A 3-Pin(3+Tab) TO-220 Tube
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