Tab | Tab |
PPAP | No |
EU RoHS | Compliant |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Unconfirmed |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.4 |
Package Height | 9.25 |
Package Length | 10 |
Product Category | Power MOSFET |
Supplier Package | TO-220 |
Maximum IDSS (uA) | 2 |
Process Technology | CoolMOS P6 |
Standard Package Name | TO-220 |
Typical Fall Time (ns) | 5 |
Typical Rise Time (ns) | 9 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 219000 |
Typical Gate Charge @ 10V (nC) | 56 |
Typical Gate Charge @ Vgs (nC) | 56@10V |
Maximum Gate Source Voltage (V) | 20 |
Typical Output Capacitance (pF) | 110 |
Typical Turn-On Delay Time (ns) | 14 |
Maximum Drain Source Voltage (V) | 600 |
Typical Gate Plateau Voltage (V) | 6.1 |
Typical Turn-Off Delay Time (ns) | 44 |
Typical Diode Forward Voltage (V) | 0.9 |
Typical Gate to Drain Charge (nC) | 20 |
Maximum Gate Threshold Voltage (V) | 4.5 |
Minimum Gate Threshold Voltage (V) | 3.5 |
Typical Gate Threshold Voltage (V) | 4 |
Typical Gate to Source Charge (nC) | 16 |
Typical Reverse Recovery Time (ns) | 385 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 30 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 2660@100V |
Typical Reverse Recovery Charge (nC) | 7000 |
Maximum Drain Source Resistance (MOhm) | 125@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 87 |
Description | |