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IPP60R125P6
IPP60R125P6
MOSFETs IPP60R125P6
Infineon
IPP60R125P6
--
Diodes, Transistors and Thyristors
MOSFETs
IPP60R125P6.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.4
Package Height9.25
Package Length10
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)2
Process TechnologyCoolMOS P6
Standard Package NameTO-220
Typical Fall Time (ns)5
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Power Dissipation (mW)219000
Typical Gate Charge @ 10V (nC)56
Typical Gate Charge @ Vgs (nC)56@10V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)110
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)600
Typical Gate Plateau Voltage (V)6.1
Typical Turn-Off Delay Time (ns)44
Typical Diode Forward Voltage (V)0.9
Typical Gate to Drain Charge (nC)20
Maximum Gate Threshold Voltage (V)4.5
Minimum Gate Threshold Voltage (V)3.5
Typical Gate Threshold Voltage (V)4
Typical Gate to Source Charge (nC)16
Typical Reverse Recovery Time (ns)385
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)2660@100V
Typical Reverse Recovery Charge (nC)7000
Maximum Drain Source Resistance (MOhm)125@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)87
Description
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220 Tube
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