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IPP65R095C7
IPP65R095C7
MOSFETs IPP65R095C7
Infineon
IPP65R095C7
--
Diodes, Transistors and Thyristors
MOSFETs
IPP65R095C7.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.57(Max)
Package Height9.45(Max)
Package Length10.36(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)1
Process TechnologyCoolMOS C7
Standard Package NameTO-220
Typical Fall Time (ns)7
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)128000
Typical Gate Charge @ 10V (nC)45
Typical Gate Charge @ Vgs (nC)45@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)60
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)24
Typical Input Capacitance @ Vds (pF)2140@400V
Maximum Drain Source Resistance (mOhm)95@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220 Tube
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