Product Attribute | Attribute Value |
HTS | 8542330001 |
Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 2.3 |
Package Height | 6.22 |
Package Length | 6.5 |
Product Category | Power MOSFET |
Supplier Package | TO-251 |
Maximum IDSS (uA) | 1 |
Process Technology | CoolMOS P7 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 23 |
Typical Rise Time (ns) | 5.5 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 43100 |
Typical Gate Charge @ 10V (nC) | 10.5 |
Typical Gate Charge @ Vgs (nC) | 10.5@10V |
Maximum Gate Source Voltage (V) | 16 |
Typical Turn-On Delay Time (ns) | 14 |
Maximum Drain Source Voltage (V) | 700 |
Typical Turn-Off Delay Time (ns) | 63 |
Typical Gate to Drain Charge (nC) | 3.7 |
Maximum Gate Threshold Voltage (V) | 3.5 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -40 |
Maximum Continuous Drain Current (A) | 8.5 |
Typical Input Capacitance @ Vds (pF) | 364@400V |
Maximum Drain Source Resistance (mOhm) | 600@10V |
Maximum Gate Source Leakage Current (nA) | 1000 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 20.5 |
Description |