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MOSFETs IPT111N20NFDATMA1
Infineon
IPT111N20NFDATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 9 |
| Automotive | Unknown |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 10.38 |
| Package Height | 2.3 |
| Package Length | 9.9 |
| Product Category | Power MOSFET |
| Supplier Package | HSOF |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS 3 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 11 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 375000 |
| Typical Gate Charge @ 10V (nC) | 65 |
| Typical Gate Charge @ Vgs (nC) | 65@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Drain Source Voltage (V) | 200 |
| Typical Turn-Off Delay Time (ns) | 39 |
| Typical Gate to Drain Charge (nC) | 8 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 96 |
| Typical Input Capacitance @ Vds (pF) | 5300@100V |
| Maximum Drain Source Resistance (MOhm) | 11.1@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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