Product Attribute | Attribute Value |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Package Width | 8 |
Package Height | 0.9(Max) |
Package Length | 8 |
Product Category | Power MOSFET |
Supplier Package | QFN EP |
Maximum IDSS (uA) | 1 |
Process Technology | TMOS |
Standard Package Name | QFN |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 10 |
Typical Rise Time (ns) | 18 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 3200 |
Typical Gate Charge @ 10V (nC) | 79 |
Typical Gate Charge @ Vgs (nC) | 79@10V|50@6V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 29 |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 40 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 24 |
Typical Input Capacitance @ Vds (pF) | 5595@50V |
Maximum Drain Source Resistance (mOhm) | 2.95@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |