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IPT60R150G7
IPT60R150G7
MOSFETs IPT60R150G7
Infineon
IPT60R150G7
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Diodes, Transistors and Thyristors
MOSFETs
IPT60R150G7.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Seven Source
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyCoolMOS G7
Typical Fall Time (ns)6
Typical Rise Time (ns)5
Number of Elements per Chip1
Maximum Power Dissipation (mW)106000
Typical Gate Charge @ 10V (nC)23
Typical Gate Charge @ Vgs (nC)23@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)56
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)17
Typical Input Capacitance @ Vds (pF)902@400V
Maximum Drain Source Resistance (MOhm)150@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 17A T/R
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