Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Automotive | No |
Part Status | Unconfirmed |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Process Technology | CoolMOS P7 |
Typical Fall Time (ns) | 5 |
Typical Rise Time (ns) | 10 |
Supplier Temperature Grade | Industrial |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 129000 |
Typical Gate Charge @ 10V (nC) | 51 |
Typical Gate Charge @ Vgs (nC) | 51@10V |
Maximum Gate Source Voltage (V) | 20 |
Typical Turn-On Delay Time (ns) | 15 |
Maximum Drain Source Voltage (V) | 600 |
Typical Turn-Off Delay Time (ns) | 70 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 37 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 2180@400V |
Maximum Drain Source Resistance (MOhm) | 80@10V |
Description |