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IPW60R080P7
IPW60R080P7
MOSFETs IPW60R080P7
Infineon
IPW60R080P7
--
Diodes, Transistors and Thyristors
MOSFETs
IPW60R080P7.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveNo
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologyCoolMOS P7
Typical Fall Time (ns)5
Typical Rise Time (ns)10
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)129000
Typical Gate Charge @ 10V (nC)51
Typical Gate Charge @ Vgs (nC)51@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)70
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)37
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)2180@400V
Maximum Drain Source Resistance (MOhm)80@10V
Description
Trans MOSFET N-CH 600V 37A
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