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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IPTG011N08NM5ATMA1
IPTG011N08NM5ATMA1
MOSFETs IPTG011N08NM5ATMA1
Infineon
IPTG011N08NM5ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
IPTG011N08NM5ATMA1.pdf
Specification
Product AttributeAttribute Value
TabTab
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count9
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Seven Source
Package Width8.55
Package Height2.3
Package Length9.75
Product CategoryPower MOSFET
Supplier PackageHSOG
Process TechnologyOptiMOS 5
Typical Fall Time (ns)30
Typical Rise Time (ns)31
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)178
Typical Gate Charge @ Vgs (nC)178@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)82
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)42
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)13000@40V
Maximum Drain Source Resistance (MOhm)1.1@10V
Description
Trans MOSFET N-CH 80V 42A 9-Pin(8+Tab) HSOG T/R
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