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IPU60R2K1CE
IPU60R2K1CE
MOSFETs IPU60R2K1CE
Infineon
IPU60R2K1CE
--
Diodes, Transistors and Thyristors
MOSFETs
IPU60R2K1CE.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.41(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageTO-251
Maximum IDSS (uA)1
Process TechnologyCoolMOS CE
Standard Package NameTO-251
Typical Fall Time (ns)50
Typical Rise Time (ns)7
Number of Elements per Chip1
Maximum Power Dissipation (mW)38000
Typical Gate Charge @ 10V (nC)6.7
Typical Gate Charge @ Vgs (nC)6.7@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)30
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)3.7
Typical Input Capacitance @ Vds (pF)140@100V
Maximum Drain Source Resistance (mOhm)2100@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 3.7A 3-Pin(3+Tab) TO-251 Tube
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