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MOSFETs IPW60R024CFD7XKSA1
Infineon
IPW60R024CFD7XKSA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 1 |
| Process Technology | CoolMOS CFD7 |
| Typical Fall Time (ns) | 9.6 |
| Typical Rise Time (ns) | 32 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 320000 |
| Typical Gate Charge @ 10V (nC) | 183 |
| Typical Gate Charge @ Vgs (nC) | 183@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 59 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 170.6 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 77 |
| Typical Input Capacitance @ Vds (pF) | 7268@400V |
| Maximum Drain Source Resistance (MOhm) | 24@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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