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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIB419DK-T1-GE3
SIB419DK-T1-GE3
MOSFETs SIB419DK-T1-GE3
Vishay
SIB419DK-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIB419DK-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.6
Package Height0.75
Package Length1.6
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-75
Process TechnologyTrenchFET
Typical Fall Time (ns)9
Typical Rise Time (ns)42
Number of Elements per Chip1
Maximum Power Dissipation (mW)2450
Typical Gate Charge @ Vgs (nC)7.15@4.5V|7.88@5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)28
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Typical Input Capacitance @ Vds (pF)562@6V
Maximum Drain Source Resistance (MOhm)60@4.5V
Description
Trans MOSFET P-CH 12V 9A 6-Pin PowerPAK SC-75 T/R
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