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IPZA60R099P7
IPZA60R099P7
MOSFETs IPZA60R099P7
Infineon
IPZA60R099P7
--
Diodes, Transistors and Thyristors
MOSFETs
IPZA60R099P7.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Source
Product CategoryPower MOSFET
Typical Fall Time (ns)5
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Power Dissipation (mW)117000
Typical Gate Charge @ 10V (nC)45
Typical Gate Charge @ Vgs (nC)45@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)23
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)89
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)31
Typical Input Capacitance @ Vds (pF)1952@400V
Maximum Drain Source Resistance (MOhm)99@10V
Description
Trans MOSFET N-CH 600V 31A Tube
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