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MOSFETs IRF7309TRPBF.
Infineon
IRF7309TRPBF.
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Height | 1.5(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Process Technology | HEXFET |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 18@P Channel|7.7@N Channel |
| Typical Rise Time (ns) | 17@P Channel|21@N Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1400 |
| Typical Gate Charge @ Vgs (nC) | 25(Max)@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 6.8@N Channel|11@P Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 22@N Channel|25@P Channel |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4@N Channel|3@P Channel |
| Typical Input Capacitance @ Vds (pF) | 440@15V@P Channel|520@15V@N Channel |
| Maximum Drain Source Resistance (MOhm) | 50@10V@N Channel|100@10V@P Channel |
| Description |
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