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MOSFETs IQE013N04LM6CGATMA1
Infineon
IQE013N04LM6CGATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS |
| Typical Fall Time (ns) | 44 |
| Typical Rise Time (ns) | 3.6 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ 10V (nC) | 41 |
| Typical Gate Charge @ Vgs (nC) | 20@4.5V|41@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 7.1 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 21 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 31 |
| Typical Input Capacitance @ Vds (pF) | 2900@20V |
| Maximum Drain Source Resistance (MOhm) | 1.35@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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