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IRF1104
IRF1104
MOSFETs IRF1104
Infineon
IRF1104
--
Diodes, Transistors and Thyristors
MOSFETs
IRF1104.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.69(Max)
Package Height8.77(Max)
Package Length10.54(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)19
Typical Rise Time (ns)114
Number of Elements per Chip1
Maximum Power Dissipation (mW)170000
Typical Gate Charge @ 10V (nC)93(Max)
Typical Gate Charge @ Vgs (nC)93(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)28
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)2900@25V
Maximum Drain Source Resistance (MOhm)9@10V
Description
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220AB Tube
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