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IRF1312S
IRF1312S
MOSFETs IRF1312S
Infineon
IRF1312S
--
Diodes, Transistors and Thyristors
MOSFETs
IRF1312S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)51
Typical Rise Time (ns)130
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)93
Typical Gate Charge @ Vgs (nC)93@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)47
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)95
Typical Input Capacitance @ Vds (pF)5450@25V
Maximum Drain Source Resistance (MOhm)10@10V
Description
Trans MOSFET N-CH 80V 95A 3-Pin(2+Tab) D2PAK
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