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IRF1607PBF
IRF1607PBF
MOSFETs IRF1607PBF
Infineon
IRF1607PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF1607PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.02(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)86
Typical Rise Time (ns)130
Number of Elements per Chip1
Maximum Power Dissipation (mW)380000
Typical Gate Charge @ 10V (nC)210
Typical Gate Charge @ Vgs (nC)210@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)22
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)84
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)142
Typical Input Capacitance @ Vds (pF)7750@25V
Maximum Drain Source Resistance (mOhm)7.5@10V
Description
Trans MOSFET N-CH Si 75V 142A 3-Pin(3+Tab) TO-220AB Tube
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