PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | P|N |
Configuration | Dual Dual Drain |
Package Width | 4(Max) |
Package Height | 1.55(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC N |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 45@P Channel|40@N Channel |
Typical Rise Time (ns) | 32@P Channel|40@N Channel |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2000 |
Typical Gate Charge @ Vgs (nC) | 22@4.5V@P Channel|25@4.5V@N Channel |
Maximum Gate Source Voltage (V) | ±12 |
Typical Output Capacitance (pF) | 600@N Channel|450@P Channel |
Typical Turn-On Delay Time (ns) | 40@N Channel|27@P Channel |
Maximum Drain Source Voltage (V) | 20 |
Typical Gate Plateau Voltage (V) | 2.1 |
Typical Turn-Off Delay Time (ns) | 90@N Channel|95@P Channel |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Gate to Drain Charge (nC) | 4@N Channel|3.5@P Channel |
Maximum Gate Threshold Voltage (V) | 1.6 |
Minimum Gate Threshold Voltage (V) | 0.6 |
Typical Gate to Source Charge (nC) | 6.5@N Channel|7@P Channel |
Typical Reverse Recovery Time (ns) | 40 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 6.2@P Channel|7.1@N Channel |
Operating Junction Temperature (°C) | -55 to 150 |
Maximum Drain Source Resistance (MOhm) | 33@4.5V@P Channel|25@4.5V@N Channel |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 12 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 40 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 7.1@N Channel|6.2@P Channel |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62.5 |
Description | |