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IRF2805LPBF
IRF2805LPBF
MOSFETs IRF2805LPBF
Infineon
IRF2805LPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF2805LPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Process TechnologyHEXFET
Standard Package NameI2PAK
Typical Fall Time (ns)110
Typical Rise Time (ns)120
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Typical Gate Charge @ 10V (nC)150
Typical Gate Charge @ Vgs (nC)150@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)68
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)135
Typical Input Capacitance @ Vds (pF)5110@25V
Maximum Drain Source Resistance (MOhm)4.7@10V
Description
Trans MOSFET N-CH Si 55V 135A 3-Pin(3+Tab) TO-262
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