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FDS9953A
FDS9953A
MOSFETs FDS9953A
onsemi
FDS9953A
--
Diodes, Transistors and Thyristors
MOSFETs
FDS9953A.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width3.9
Package Height1.5(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyTMOS
Standard Package NameSOP
Typical Fall Time (ns)2
Typical Rise Time (ns)13
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)2.5
Typical Gate Charge @ Vgs (nC)2.5@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)4.5
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)11
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.9
Typical Input Capacitance @ Vds (pF)185@15V
Maximum Drain Source Resistance (mOhm)130@10V
Description
Trans MOSFET P-CH 30V 2.9A 8-Pin SOIC T/R
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