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IRF3205ZLPBF
IRF3205ZLPBF
MOSFETs IRF3205ZLPBF
Infineon
IRF3205ZLPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF3205ZLPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Process TechnologyHEXFET
Standard Package NameI2PAK
Typical Fall Time (ns)67
Typical Rise Time (ns)95
Number of Elements per Chip1
Maximum Power Dissipation (mW)170000
Typical Gate Charge @ 10V (nC)76
Typical Gate Charge @ Vgs (nC)76@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)45
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)110
Typical Input Capacitance @ Vds (pF)3450@25V
Maximum Drain Source Resistance (MOhm)6.5@10V
Description
Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-262 Tube
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