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IRF3515SPBF
IRF3515SPBF
MOSFETs IRF3515SPBF
Infineon
IRF3515SPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF3515SPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)25
Process TechnologyHEXFET
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)63
Typical Rise Time (ns)120
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Typical Gate Charge @ 10V (nC)107(Max)
Typical Gate Charge @ Vgs (nC)107(Max)@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)34
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)41
Typical Input Capacitance @ Vds (pF)2260@25V
Maximum Drain Source Resistance (MOhm)45@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 150V 41A 3-Pin(2+Tab) D2PAK Tube
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