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IRF3808STRR
IRF3808STRR
MOSFETs IRF3808STRR
Infineon
IRF3808STRR
--
Diodes, Transistors and Thyristors
MOSFETs
IRF3808STRR.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveUnknown
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)120
Typical Rise Time (ns)140
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Typical Gate Charge @ 10V (nC)150
Typical Gate Charge @ Vgs (nC)150@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)68
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)106
Typical Input Capacitance @ Vds (pF)5310@25V
Maximum Drain Source Resistance (mOhm)7@10V
Description
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab) D2PAK T/R
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